MCP87018 - Аналоги. Основные параметры
Наименование производителя: MCP87018
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 28.3 ns
Cossⓘ - Выходная емкость: 1305 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0019 Ohm
Тип корпуса: PDFN5X6
Аналог (замена) для MCP87018
MCP87018 технические параметры
mcp87018.pdf
MCP87018 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87018 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) packaging and silicon processing technologies allow the MCP87018 to achieve a low QG for a given RDS(on) Low Series Ga
mcp87055.pdf
MCP87055 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87055 device is an N-Channel power MOSFET in a popular PDFN 3.3 mm x 3.3 mm Low Total Gate Charge (QG) and Gate-to-Drain package. Advanced packaging and silicon processing Charge (QGD) technologies allow the MCP87055 to achieve a low QG Low Series Gate Resista
mcp87090.pdf
MCP87090 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87090 is an N-Channel power MOSFET in a Low Total Gate Charge (QG) and Gate-to-Drain popular PDFN 5 mm x 6 mm package, as well as a Charge (QGD) PDFN 3.3 mm x 3.3 mm package. Advanced Low Series Gate Resistance (RG) packaging and silicon processing technol
mcp87050.pdf
MCP87050 High-Speed N-Channel Power MOSFET Features Description Low Drain-to-Source On Resistance (RDS(ON)) The MCP87050 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced Low Total Gate Charge (QG) and Gate-to-Drain packaging and silicon processing technologies allow Charge (QGD) the MCP87050 to achieve a low QG for a given RDS(ON) Low Series Ga
Другие MOSFET... MCH6429 , MCH6660 , MCH6661 , MCH6662 , MCH6663 , MCH6664 , MCP04N60 , MCP04N65 , IRF1405 , MCP87022 , MCP87030 , MCP87050 , MCP87055 , MCP87090 , MCP87130 , MCPF04N60 , MCPF04N65 .
Список транзисторов
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