MGSF1N02ELT1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MGSF1N02ELT1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de MOSFET MGSF1N02ELT1

MGSF1N02ELT1 Datasheet (PDF)

..1. Size:70K onsemi
mgsf1n02elt1.pdf

MGSF1N02ELT1Preferred DevicePower MOSFET750 mAmps, 20 VoltsNChannel SOT23These miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealhttp://onsemi.comfor use in space sensitive power management circuitry. Typicalapplications are dcdc converters and power management in portable750 mAMPSand batterypowe

0.1. Size:116K motorola
mgsf1n02elt1rev0x.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF1N02ELT1/DMGSF1N02ELT1Low rDS(on) Small-Signal MOSFETsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorNCHANNELLOGIC LEVELPart of the GreenLine Portfolio of devices with energyENHANCEMENTMODEconserving traits.TMOS MOSFETThese miniature surface mount MOSFETs utilize Mo

6.1. Size:127K motorola
mgsf1n02lt1rev2.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF1N02LT1/DMGSF1N02LT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single N-ChannelNCHANNELENHANCEMENTMODEField Effect TransistorsTMOS MOSFETPart of the GreenLine Portfolio of devices with energyconserving traits.These miniature surface mount MOSFETs utilize Motorola

6.2. Size:154K onsemi
mgsf1n02l mvgsf1n02l.pdf

MGSF1N02L, MVGSF1N02LPower MOSFET750 mAmps, 20 VoltsN-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assurewww.onsemi.comminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typical750 mAMPS, 20 VOLTSapplications are dc-dc converters and power management in portableRDS(on) = 90 mWand batte

6.3. Size:63K onsemi
mgsf1n02lt1-d.pdf

MGSF1N02LT1Preferred DevicePower MOSFET750 mAmps, 20 VoltsN-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typical750 mAMPS, 20 VOLTSapplications are dc-dc converters and power management in portableRDS(on) = 90 mW

6.4. Size:53K tysemi
mgsf1n02lt1.pdf

Product specificationMGSF1N02LT1Power MOSFET750 mAMPS750 mAmps, 20 Volts 20 VOLTSRDS(on) = 90 mWNChannel SOT23These miniature surface mount MOSFETs low RDS(on) assureNChannelminimal power loss and conserve energy, making these devices ideal3for use in space sensitive power management circuitry. Typicalapplications are dcdc converters and power management in p

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