Справочник MOSFET. MGSF1N02ELT1

 

MGSF1N02ELT1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MGSF1N02ELT1
   Маркировка: NE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.75 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 6.5 nC
   trⓘ - Время нарастания: 26 ns
   Cossⓘ - Выходная емкость: 130 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.085 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для MGSF1N02ELT1

 

 

MGSF1N02ELT1 Datasheet (PDF)

 ..1. Size:70K  onsemi
 mgsf1n02elt1.pdf

MGSF1N02ELT1 MGSF1N02ELT1

MGSF1N02ELT1Preferred DevicePower MOSFET750 mAmps, 20 VoltsNChannel SOT23These miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealhttp://onsemi.comfor use in space sensitive power management circuitry. Typicalapplications are dcdc converters and power management in portable750 mAMPSand batterypowe

 0.1. Size:116K  motorola
 mgsf1n02elt1rev0x.pdf

MGSF1N02ELT1 MGSF1N02ELT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF1N02ELT1/DMGSF1N02ELT1Low rDS(on) Small-Signal MOSFETsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorNCHANNELLOGIC LEVELPart of the GreenLine Portfolio of devices with energyENHANCEMENTMODEconserving traits.TMOS MOSFETThese miniature surface mount MOSFETs utilize Mo

 6.1. Size:127K  motorola
 mgsf1n02lt1rev2.pdf

MGSF1N02ELT1 MGSF1N02ELT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF1N02LT1/DMGSF1N02LT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single N-ChannelNCHANNELENHANCEMENTMODEField Effect TransistorsTMOS MOSFETPart of the GreenLine Portfolio of devices with energyconserving traits.These miniature surface mount MOSFETs utilize Motorola

 6.2. Size:154K  onsemi
 mgsf1n02l mvgsf1n02l.pdf

MGSF1N02ELT1 MGSF1N02ELT1

MGSF1N02L, MVGSF1N02LPower MOSFET750 mAmps, 20 VoltsN-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assurewww.onsemi.comminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typical750 mAMPS, 20 VOLTSapplications are dc-dc converters and power management in portableRDS(on) = 90 mWand batte

 6.3. Size:63K  onsemi
 mgsf1n02lt1-d.pdf

MGSF1N02ELT1 MGSF1N02ELT1

MGSF1N02LT1Preferred DevicePower MOSFET750 mAmps, 20 VoltsN-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typical750 mAMPS, 20 VOLTSapplications are dc-dc converters and power management in portableRDS(on) = 90 mW

 6.4. Size:53K  tysemi
 mgsf1n02lt1.pdf

MGSF1N02ELT1 MGSF1N02ELT1

Product specificationMGSF1N02LT1Power MOSFET750 mAMPS750 mAmps, 20 Volts 20 VOLTSRDS(on) = 90 mWNChannel SOT23These miniature surface mount MOSFETs low RDS(on) assureNChannelminimal power loss and conserve energy, making these devices ideal3for use in space sensitive power management circuitry. Typicalapplications are dcdc converters and power management in p

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 

Back to Top