All MOSFET. MGSF1N02ELT1 Datasheet

 

MGSF1N02ELT1 Datasheet and Replacement


   Type Designator: MGSF1N02ELT1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT-23
 

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MGSF1N02ELT1 Datasheet (PDF)

 ..1. Size:70K  onsemi
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MGSF1N02ELT1

MGSF1N02ELT1Preferred DevicePower MOSFET750 mAmps, 20 VoltsNChannel SOT23These miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealhttp://onsemi.comfor use in space sensitive power management circuitry. Typicalapplications are dcdc converters and power management in portable750 mAMPSand batterypowe

 0.1. Size:116K  motorola
mgsf1n02elt1rev0x.pdf pdf_icon

MGSF1N02ELT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF1N02ELT1/DMGSF1N02ELT1Low rDS(on) Small-Signal MOSFETsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorNCHANNELLOGIC LEVELPart of the GreenLine Portfolio of devices with energyENHANCEMENTMODEconserving traits.TMOS MOSFETThese miniature surface mount MOSFETs utilize Mo

 6.1. Size:127K  motorola
mgsf1n02lt1rev2.pdf pdf_icon

MGSF1N02ELT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF1N02LT1/DMGSF1N02LT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single N-ChannelNCHANNELENHANCEMENTMODEField Effect TransistorsTMOS MOSFETPart of the GreenLine Portfolio of devices with energyconserving traits.These miniature surface mount MOSFETs utilize Motorola

 6.2. Size:154K  onsemi
mgsf1n02l mvgsf1n02l.pdf pdf_icon

MGSF1N02ELT1

MGSF1N02L, MVGSF1N02LPower MOSFET750 mAmps, 20 VoltsN-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assurewww.onsemi.comminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typical750 mAMPS, 20 VOLTSapplications are dc-dc converters and power management in portableRDS(on) = 90 mWand batte

Datasheet: MCU02N80 , MCU04N60 , MCU04N65 , MCU05N60 , ME3587-G , MFE930 , MFE960 , MFE990 , IRF740 , SP8K24FRA , SP8K31FRA , SP8K33FRA , SP8K80 , SP8M10FRA , SP8M21FRA , SP8M51 , SP8M70 .

History: PMXB120EPE | HM2312B | APT6040SVFR | QM4014D | DMN4035L | 2SK511 | 2N60G-TF3-T

Keywords - MGSF1N02ELT1 MOSFET datasheet

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