IXFX180N07 Todos los transistores

 ..1. Size:80K  ixys
 ixfk180n07 ixfx180n07.pdf

IXFK 180N07 VDSS = 70 V HiPerFETTM IXFX 180N07 ID25 = 180 A Power MOSFETs RDS(on) = 6 m Single MOSFET Die trr 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings PLUS 247TM VDSS TJ = 25 C to 150 C70 V VDGR TJ = 25 C to 150 C; RGS = 1 M 70 V D (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 2

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 ixfk180n085 ixfx180n085.pdf

Advanced Technical Information HiPerFETTM IXFK 180N085 VDSS = 85 V IXFX 180N085 ID25 = 180 A Power MOSFETs RDS(on) = 7 mW Single MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C85 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 85 V D (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET chip capability) 1

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 ixfk180n25t ixfx180n25t.pdf

Advance Technical Information GigaMOSTM VDSS = 250V IXFK180N25T ID25 = 180A Power MOSFET IXFX180N25T RDS(on) 12.9m trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V G VDGR TJ = 25 C to 150 C, RGS = 1M

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 ixfk180n15p ixfx180n15p.pdf

VDSS = 150 V IXFK 180N15P PolarTM HiPerFET ID25 = 180 A IXFX 180N15P Power MOSFET RDS(on) 11 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VDS Continuous 20 V TO

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 ixfk180n10 ixfx180n10.pdf

HiPerFETTM IXFK 180N10 VDSS = 100 V IXFX 180N10 ID25 = 180 A Power MOSFETs RDS(on) = 8 mW Single MOSFET Die trr 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D ID25 TC = 25 C (MOSFET chip capability) 180 A