IXFX180N07 PDF and Equivalents Search

 

IXFX180N07 Specs and Replacement

Type Designator: IXFX180N07

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 560 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 4600 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO247

IXFX180N07 substitution

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IXFX180N07 datasheet

 ..1. Size:80K  ixys
ixfk180n07 ixfx180n07.pdf pdf_icon

IXFX180N07

IXFK 180N07 VDSS = 70 V HiPerFETTM IXFX 180N07 ID25 = 180 A Power MOSFETs RDS(on) = 6 m Single MOSFET Die trr 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings PLUS 247TM VDSS TJ = 25 C to 150 C70 V VDGR TJ = 25 C to 150 C; RGS = 1 M 70 V D (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 2... See More ⇒

 5.1. Size:46K  ixys
ixfk180n085 ixfx180n085.pdf pdf_icon

IXFX180N07

Advanced Technical Information HiPerFETTM IXFK 180N085 VDSS = 85 V IXFX 180N085 ID25 = 180 A Power MOSFETs RDS(on) = 7 mW Single MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C85 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 85 V D (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET chip capability) 1... See More ⇒

 6.1. Size:138K  ixys
ixfk180n25t ixfx180n25t.pdf pdf_icon

IXFX180N07

Advance Technical Information GigaMOSTM VDSS = 250V IXFK180N25T ID25 = 180A Power MOSFET IXFX180N25T RDS(on) 12.9m trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V G VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒

 6.2. Size:178K  ixys
ixfk180n15p ixfx180n15p.pdf pdf_icon

IXFX180N07

VDSS = 150 V IXFK 180N15P PolarTM HiPerFET ID25 = 180 A IXFX 180N15P Power MOSFET RDS(on) 11 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VDS Continuous 20 V TO... See More ⇒

Detailed specifications: IXFT80N20Q , IXFX100N25 , IXFX120N20 , IXFX13N100 , IXFX14N100 , IXFX150N15 , IXFX15N100 , IXFX16N90 , IRF1407 , IXFX180N085 , IXFX180N10 , IXFX24N100 , IXFX26N90 , IXFX28N60 , IXFX32N50Q , IXFX34N80 , IXFX44N60 .

Keywords - IXFX180N07 MOSFET specs

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