SPC1016 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SPC1016 Datasheet (PDF)

..1. Size:266K syncpower
spc1016.pdf pdf_icon

SPC1016 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC1016 is the Dual P-Channel enhancement mode Portable Equipment power field effect transistors are produced using high cell Battery Powered System density , DMOS trench technology. This high density DC/DC Converter process is especially tailored to minimize on-state

8.1. Size:292K syncpower
spc1018.pdf pdf_icon

SPC1810 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC1810 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

9.1. Size:909K cn sinai power
spc10n65g.pdf pdf_icon

SPC10N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=10A(Vgs=10V) R max. at 25oC () V =10V 1.1 DS(on) GS Ultra Low Gate Charge Q max. (nC) 45 g Improved dv/dt Capability Q (nC) 7 gs 100% Avalanche Tested Q (nC) 15 gd RoHS compliant Configuration single App

9.2. Size:821K cn sinai power
spc10n80g.pdf pdf_icon

SPC10N80G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 850 DS J ID=10A(Vgs=10V) R max. at 25oC () V =10V 1.2DS(on) GS Ultra Low Gate Charge Q max. (nC) 70 g Improved dv/dt Capability Q (nC) 14 gs 100% Avalanche Tested Q (nC) 21 gd RoHS compliant Configuration single A

Otros transistores... SP8M10FRA , SP8M21FRA , SP8M51 , SP8M70 , SP8M8FRA , SPB100N03S2 , SPB42N03S2L-13 , SPB80N03S2 , IRFP260N , SPC1018 , SPC4516 , SPC4516B , SPC4527 , SPC4533 , SPC4533W , SPC4539 , SPC4539B .