SPC1016
MOSFET. Datasheet pdf. Equivalent
Type Designator: SPC1016
Marking Code: C
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 0.65
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1.2
nC
trⓘ - Rise Time: 8
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38
Ohm
Package:
SOT-563
SPC1016
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPC1016
Datasheet (PDF)
..1. Size:266K syncpower
spc1016.pdf
SPC1016 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC1016 is the Dual P-Channel enhancement mode Portable Equipment power field effect transistors are produced using high cell Battery Powered System density , DMOS trench technology. This high density DC/DC Converter process is especially tailored to minimize on-state
8.1. Size:292K syncpower
spc1018.pdf
SPC1810 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC1810 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta
9.1. Size:909K cn sinai power
spc10n65g.pdf
SPC10N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=10A(Vgs=10V) R max. at 25oC () V =10V 1.1 DS(on) GS Ultra Low Gate Charge Q max. (nC) 45 g Improved dv/dt Capability Q (nC) 7 gs 100% Avalanche Tested Q (nC) 15 gd RoHS compliant Configuration single App
9.2. Size:821K cn sinai power
spc10n80g.pdf
SPC10N80G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 850 DS J ID=10A(Vgs=10V) R max. at 25oC () V =10V 1.2DS(on) GS Ultra Low Gate Charge Q max. (nC) 70 g Improved dv/dt Capability Q (nC) 14 gs 100% Avalanche Tested Q (nC) 21 gd RoHS compliant Configuration single A
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