IXFX180N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFX180N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 560 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 180 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 360 nC
Tiempo de subida (tr): 90 nS
Conductancia de drenaje-sustrato (Cd): 3200 pF
Resistencia entre drenaje y fuente RDS(on): 0.008 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MOSFET IXFX180N10
IXFX180N10 Datasheet (PDF)
ixfk180n10 ixfx180n10.pdf
HiPerFETTM IXFK 180N10 VDSS = 100 VIXFX 180N10 ID25 = 180 APower MOSFETsRDS(on) = 8 mWSingle MOSFET Dietrr 250 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings PLUS 247TM(IXFX)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 MW 100 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDID25 TC = 25C (MOSFET chip capability) 180 A
ixfk180n15p ixfx180n15p.pdf
VDSS = 150 VIXFK 180N15PPolarTM HiPerFETID25 = 180 AIXFX 180N15PPower MOSFET RDS(on) 11 m N-Channel Enhancement Modetrr 200 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VVDS Continuous 20 VTO
ixfk180n25t ixfx180n25t.pdf
Advance Technical InformationGigaMOSTM VDSS = 250VIXFK180N25TID25 = 180APower MOSFETIXFX180N25T RDS(on) 12.9m trr 200nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 250 VGVDGR TJ = 25C to 150C, RGS = 1M
ixfk180n085 ixfx180n085.pdf
Advanced Technical InformationHiPerFETTM IXFK 180N085 VDSS = 85 VIXFX 180N085 ID25 = 180 APower MOSFETsRDS(on) = 7 mWSingle MOSFET Dietrr 250 nsSymbol Test Conditions Maximum Ratings PLUS 247TM (IXFX)VDSS TJ = 25C to 150C85 VVDGR TJ = 25C to 150C; RGS = 1 MW 85 VD (TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C (MOSFET chip capability) 1
ixfk180n07 ixfx180n07.pdf
IXFK 180N07 VDSS = 70 VHiPerFETTMIXFX 180N07 ID25 = 180 APower MOSFETsRDS(on) = 6 mSingle MOSFET Die trr 250 ns Preliminary Data SheetSymbol Test Conditions Maximum Ratings PLUS 247TMVDSS TJ = 25C to 150C70 VVDGR TJ = 25C to 150C; RGS = 1 M 70 VD (TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 2
Otros transistores... IXFX120N20 , IXFX13N100 , IXFX14N100 , IXFX150N15 , IXFX15N100 , IXFX16N90 , IXFX180N07 , IXFX180N085 , NCEP8818AS , IXFX24N100 , IXFX26N90 , IXFX28N60 , IXFX32N50Q , IXFX34N80 , IXFX44N60 , IXFX48N50Q , IXFX50N50 .
