All MOSFET. IXFX180N10 Datasheet

 

IXFX180N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFX180N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 560 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 360 nC
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 3200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO247

 IXFX180N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFX180N10 Datasheet (PDF)

Datasheet: IXFX120N20 , IXFX13N100 , IXFX14N100 , IXFX150N15 , IXFX15N100 , IXFX16N90 , IXFX180N07 , IXFX180N085 , IRF830 , IXFX24N100 , IXFX26N90 , IXFX28N60 , IXFX32N50Q , IXFX34N80 , IXFX44N60 , IXFX48N50Q , IXFX50N50 .

 

 
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