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SPN1012 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPN1012
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.65 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: SOT-523
 

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SPN1012 Datasheet (PDF)

 ..1. Size:177K  syncpower
 spn1012.pdf pdf_icon

SPN1012

SPN1012 N-Channel Enhancement Mode MOSFETDESCRIPTION APPLICATIONS Drivers : Relays/Solenoids/Lamps/Hammers The SPN1012 is the N-Channel enhancement mode Power Supply Converter Circuits power field effect transistors are produced using high cell Load/Power Switching Cell Phones, Pagers density , DMOS trench technology. This high density process is especially tailored to mi

 9.1. Size:291K  syncpower
 spn10t10.pdf pdf_icon

SPN1012

SPN10T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Powered System The SPN10T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. The SPN10T10 has been designed specifically to improve the overall efficiency of DC/DC converters using eith

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