SPN1012 Datasheet and Replacement
Type Designator: SPN1012
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.65 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: SOT-523
SPN1012 substitution
SPN1012 Datasheet (PDF)
spn1012.pdf

SPN1012 N-Channel Enhancement Mode MOSFETDESCRIPTION APPLICATIONS Drivers : Relays/Solenoids/Lamps/Hammers The SPN1012 is the N-Channel enhancement mode Power Supply Converter Circuits power field effect transistors are produced using high cell Load/Power Switching Cell Phones, Pagers density , DMOS trench technology. This high density process is especially tailored to mi
spn10t10.pdf

SPN10T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Powered System The SPN10T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. The SPN10T10 has been designed specifically to improve the overall efficiency of DC/DC converters using eith
Datasheet: SPD50N03S2L-06T , SPI80N06S-80 , SPM1007 , SPM1008 , SPMT16040F , SPMT9200F , SPN05T10 , SPN09T10 , TK10A60D , SPN10T10 , SPN11T10 , SPN12T20 , SPN30T10 , SPN50T10 , SPN65T10 , SPN80T10 , SPP08P06P .
History: SE3050 | TPCS8303 | AOLF66610 | STL9P2UH7 | SE40300GTS | SED2145 | HFP11N40
Keywords - SPN1012 MOSFET datasheet
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History: SE3050 | TPCS8303 | AOLF66610 | STL9P2UH7 | SE40300GTS | SED2145 | HFP11N40



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