SPN1012 MOSFET. Datasheet pdf. Equivalent
Type Designator: SPN1012
Marking Code: X
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 0.65 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.2 nC
trⓘ - Rise Time: 8 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: SOT-523
SPN1012 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPN1012 Datasheet (PDF)
spn1012.pdf
SPN1012 N-Channel Enhancement Mode MOSFETDESCRIPTION APPLICATIONS Drivers : Relays/Solenoids/Lamps/Hammers The SPN1012 is the N-Channel enhancement mode Power Supply Converter Circuits power field effect transistors are produced using high cell Load/Power Switching Cell Phones, Pagers density , DMOS trench technology. This high density process is especially tailored to mi
spn10t10.pdf
SPN10T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Powered System The SPN10T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. The SPN10T10 has been designed specifically to improve the overall efficiency of DC/DC converters using eith
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
