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SPN30T10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPN30T10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 137 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: TO-252
 

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SPN30T10 Datasheet (PDF)

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SPN30T10

SPN30T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS High Frequency Small Power System The SPN30T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. SPN30T10 has been designed specifically to improve the overall efficiency of DC/DC conver

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SPN30T10

SPN3006 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS High Frequency Synchronous Buck Converter The SPN3006 is the N-Channel logic enhancement mode DC/DC Power System power field effect transistors are produced using high cell Load Switch density, DMOS trench technology. The SPN3006 has been designed specifically to improve the overall efficiency of

Otros transistores... SPMT16040F , SPMT9200F , SPN05T10 , SPN09T10 , SPN1012 , SPN10T10 , SPN11T10 , SPN12T20 , IRF530 , SPN50T10 , SPN65T10 , SPN80T10 , SPP08P06P , SPP14N05 , SPP15P10P , SPP15P10PH , SPP15P10PL .

History: APT6013B2LL | 2SK3153 | AP9926GEO | AOD474 | CS16N60A8H | 2SK2943 | NCE65N460I

 

 
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