All MOSFET. SPN30T10 Datasheet

 

SPN30T10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPN30T10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 137 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO-252

 SPN30T10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPN30T10 Datasheet (PDF)

 ..1. Size:174K  syncpower
 spn30t10.pdf

SPN30T10 SPN30T10

SPN30T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS High Frequency Small Power System The SPN30T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. SPN30T10 has been designed specifically to improve the overall efficiency of DC/DC conver

 9.1. Size:446K  syncpower
 spn3006.pdf

SPN30T10 SPN30T10

SPN3006 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS High Frequency Synchronous Buck Converter The SPN3006 is the N-Channel logic enhancement mode DC/DC Power System power field effect transistors are produced using high cell Load Switch density, DMOS trench technology. The SPN3006 has been designed specifically to improve the overall efficiency of

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History: CHM61A3PAGP | PHP3N40E

 

 
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