All MOSFET. SPN30T10 Datasheet

 

SPN30T10 Datasheet and Replacement


   Type Designator: SPN30T10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 137 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO-252
 

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SPN30T10 Datasheet (PDF)

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SPN30T10

SPN30T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS High Frequency Small Power System The SPN30T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. SPN30T10 has been designed specifically to improve the overall efficiency of DC/DC conver

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SPN30T10

SPN3006 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS High Frequency Synchronous Buck Converter The SPN3006 is the N-Channel logic enhancement mode DC/DC Power System power field effect transistors are produced using high cell Load Switch density, DMOS trench technology. The SPN3006 has been designed specifically to improve the overall efficiency of

Datasheet: SPMT16040F , SPMT9200F , SPN05T10 , SPN09T10 , SPN1012 , SPN10T10 , SPN11T10 , SPN12T20 , IRF530 , SPN50T10 , SPN65T10 , SPN80T10 , SPP08P06P , SPP14N05 , SPP15P10P , SPP15P10PH , SPP15P10PL .

History: AP25N10GS-HF | HM4N60K | LSGG08R060W3 | IRF7309I | QS6J11 | 8N60KG-TF2-T | IPAN70R360P7S

Keywords - SPN30T10 MOSFET datasheet

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