SQ4942EY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SQ4942EY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 4.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 28.4 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 199 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET SQ4942EY

SQ4942EY Datasheet (PDF)

..1. Size:251K vishay
sq4942ey.pdf

SQ4942EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.020 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.026 100 % Rg and UIS TestedID (A) 8 AEC-Q101 QualifieddConfiguration Dual Compliant to R

9.1. Size:251K vishay
sq4949ey.pdf

SQ4949EYwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 30DefinitionRDS(on) () at VGS = - 10 V 0.035 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.065 100 % Rg and UIS TestedID (A) per leg - 7.5 AEC-Q101 QualifiedcConfiguration Dual

9.2. Size:255K vishay
sq4946aey.pdf

SQ4946AEYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.040 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.055 Material categorization:For definitions of compliance please seeID (A) per leg 7www.vishay.com/d

9.3. Size:251K vishay
sq4940ey.pdf

SQ4940EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.055 100 % Rg and UIS TestedID (A) 7 AEC-Q101 QualifiedcConfiguration Dual Compliant to R

9.4. Size:230K vishay
sq4940aey.pdf

SQ4940AEYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.024 AEC-Q101 qualified dRDS(on) () at VGS = 4.5 V 0.029 Material categorization:ID (A) 8For definitions of compliance please see Configuration Dual

9.5. Size:111K vishay
sq4946ey.pdf

SQ4946EYVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60Pb-free Package with Low Thermal ResistanceAvailableRDS(on) () at VGS = 10 V 0.055RoHS*ID (A) 4.5AEC-Q101 RELIABILITYCOMPLIANTConfiguration Dual Passed all AEC-Q101 Reliability Testing Characterization OngoingD1

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