SQ4942EY
MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ4942EY
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 4.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 28.4
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 199
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02
Ohm
Package:
SO-8
SQ4942EY
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ4942EY
Datasheet (PDF)
..1. Size:251K vishay
sq4942ey.pdf 
SQ4942EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.020 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.026 100 % Rg and UIS TestedID (A) 8 AEC-Q101 QualifieddConfiguration Dual Compliant to R
9.1. Size:251K vishay
sq4949ey.pdf
SQ4949EYwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 30DefinitionRDS(on) () at VGS = - 10 V 0.035 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.065 100 % Rg and UIS TestedID (A) per leg - 7.5 AEC-Q101 QualifiedcConfiguration Dual
9.2. Size:255K vishay
sq4946aey.pdf
SQ4946AEYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.040 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.055 Material categorization:For definitions of compliance please seeID (A) per leg 7www.vishay.com/d
9.3. Size:251K vishay
sq4940ey.pdf
SQ4940EYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.055 100 % Rg and UIS TestedID (A) 7 AEC-Q101 QualifiedcConfiguration Dual Compliant to R
9.4. Size:230K vishay
sq4940aey.pdf
SQ4940AEYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.024 AEC-Q101 qualified dRDS(on) () at VGS = 4.5 V 0.029 Material categorization:ID (A) 8For definitions of compliance please see Configuration Dual
9.5. Size:111K vishay
sq4946ey.pdf
SQ4946EYVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60Pb-free Package with Low Thermal ResistanceAvailableRDS(on) () at VGS = 10 V 0.055RoHS*ID (A) 4.5AEC-Q101 RELIABILITYCOMPLIANTConfiguration Dual Passed all AEC-Q101 Reliability Testing Characterization OngoingD1
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