SQD10N30-330H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SQD10N30-330H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 107 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 112 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.33 Ohm

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SQD10N30-330H datasheet

 ..1. Size:201K  vishay
 sqd10n30-330h.pdf pdf_icon

SQD10N30-330H

SQD10N30-330H www.vishay.com Vishay Siliconix Automotive N-Channel 300 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 300 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.330 AEC-Q101 qualified d ID (A) 10 100 % Rg tested Configuration Single Material categorization for definitions of compliance please see D

 9.1. Size:153K  vishay
 sqd100n03-3m4.pdf pdf_icon

SQD10N30-330H

SQD100N03-3m4 www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.0034 AEC-Q101 Qualifiedd ID (A) 100 Material categorization Configuration Single For definitions of compliance please see www.vishay.com/doc?99912 TO-2

 9.2. Size:152K  vishay
 sqd100n04-3m6.pdf pdf_icon

SQD10N30-330H

SQD100N04-3m6 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0036 100 % Rg and UIS Tested ID (A) 100 AEC-Q101 Qualifiedd Configuration Single Material categorization TO-252 For definitions of compli

 9.3. Size:183K  vishay
 sqd100n04-3m6l.pdf pdf_icon

SQD10N30-330H

SQD100N04-3m6L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 40 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.0036 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0042 AEC-Q101 qualified d ID (A) 100 Configuration Single Material categorization

MOSTRAR MÁS

Otros transistores... SQ9407EY, SQ9945BEY, SQA410EJ, SQD07N25-350H, SQD100N03-3M2L, SQD100N03-3M4, SQD100N04-3M6, SQD100N04-3M6L, BS170, SQD15N06-42L, SQD19P06-60L, SQD23N06-31L, SQD25N06-22L, SQD25N15-52, SQD30N05-20L, SQD35N05-26L, SQD40N04-10A