All MOSFET. SQD10N30-330H Datasheet

 

SQD10N30-330H Datasheet and Replacement


   Type Designator: SQD10N30-330H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 31 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 112 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
 

 SQD10N30-330H substitution

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SQD10N30-330H Datasheet (PDF)

 ..1. Size:201K  vishay
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SQD10N30-330H

SQD10N30-330Hwww.vishay.comVishay SiliconixAutomotive N-Channel 300 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 300 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.330 AEC-Q101 qualified dID (A) 10 100 % Rg testedConfiguration Single Material categorization:for definitions of compliance please seeD

 9.1. Size:153K  vishay
sqd100n03-3m4.pdf pdf_icon

SQD10N30-330H

SQD100N03-3m4www.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0034 AEC-Q101 QualifieddID (A) 100 Material categorization:Configuration SingleFor definitions of compliance please see www.vishay.com/doc?99912 TO-2

 9.2. Size:152K  vishay
sqd100n04-3m6.pdf pdf_icon

SQD10N30-330H

SQD100N04-3m6www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0036 100 % Rg and UIS TestedID (A) 100 AEC-Q101 QualifieddConfiguration Single Material categorization:TO-252For definitions of compli

 9.3. Size:183K  vishay
sqd100n04-3m6l.pdf pdf_icon

SQD10N30-330H

SQD100N04-3m6Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0036 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0042 AEC-Q101 qualified dID (A) 100Configuration Single Material categorization:

Datasheet: SQ9407EY , SQ9945BEY , SQA410EJ , SQD07N25-350H , SQD100N03-3M2L , SQD100N03-3M4 , SQD100N04-3M6 , SQD100N04-3M6L , 18N50 , SQD15N06-42L , SQD19P06-60L , SQD23N06-31L , SQD25N06-22L , SQD25N15-52 , SQD30N05-20L , SQD35N05-26L , SQD40N04-10A .

Keywords - SQD10N30-330H MOSFET datasheet

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