SQD50N10-8M9L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SQD50N10-8M9L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 136 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 1441 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0089 Ohm
   Paquete / Cubierta: TO-252

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SQD50N10-8M9L Datasheet (PDF)

..1. Size:157K vishay
sqd50n10-8m9l.pdf

SQD50N10-8m9Lwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0089 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.0112 100 % Rg and UIS TestedID (A) 50 Material categorization:Configuration Single

8.1. Size:105K vishay
sqd50n03-4m0l.pdf

SQD50N03-4m0Lwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0031 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0040 Material categorization:ID (A) 50For definitions of compliance please seeConfiguration Single

8.2. Size:166K vishay
sqd50n04-09h.pdf

SQD50N04-09Hwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.009 TrenchFET Power MOSFETID (A) 50 Package with Low Thermal ResistanceConfiguration Single 100 % Rg and UIS TestedD AEC-Q101 QualifieddTO-252

8.3. Size:171K vishay
sqd50n03-06p.pdf

SQD50N03-06Pwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0060 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.0085 Material categorization:ID (A) 50For definitions of compliance please see Configuration Singl

8.4. Size:170K vishay
sqd50n05-11l.pdf

SQD50N05-11Lwww.vishay.comVishay SiliconixAutomotive N-Channel 50 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 50 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.011 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.015 AEC-Q101 QualifieddID (A) 50 Material categorization:Configuration Single

8.5. Size:168K vishay
sqd50n30-4m0l.pdf

8.6. Size:152K vishay
sqd50n03.pdf

SQD50N03-09Vishay SiliconixAutomotiveN-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.009 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.012 Compliant to RoHS Directive 2002/95/ECID (A) 50 AEC-Q101 QualifieddConfiguration Single Find out more

8.7. Size:158K vishay
sqd50n04-5m6.pdf

SQD50N04-5m6www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0056 AEC-Q101 QualifiedID (A) 50 100 % Rg and UIS Tested Material categorization:Configuration SingleFor definitions of compliance please se

8.8. Size:167K vishay
sqd50n04-4m5l.pdf

SQD50N04-4m5Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0035 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.0042 100 % Rg and UIS TestedID (A) 50 Material categorization:Configuration Single

8.9. Size:166K vishay
sqd50n04-5m0.pdf

SQD50N04-5m0Vishay SiliconixAutomotiveN-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.005 TrenchFET Power MOSFETID (A) 50 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD Compliant to RoHS Directive 2002/95/ECTO-252

8.10. Size:174K vishay
sqd50n04-3m5l.pdf

SQD50N04-3m5Lwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0035 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.0042 100 % Rg and UIS TestedID (A) 50 Material categorization:Configuration SingleF

8.11. Size:168K vishay
sqd50n03-09.pdf

SQD50N03-09www.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.009 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.012 100 % Rg and UIS TestedID (A) 50 Compliant to RoHS Directive 2002/95/ECConfiguration Single

8.12. Size:168K vishay
sqd50n06-07l.pdf

SQD50N06-07Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0076 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.009 Package with Low Thermal ResistanceID (A) 50 100 % Rg and UIS TestedConfiguration Single

8.13. Size:170K vishay
sqd50n06-09l.pdf

SQD50N06-09Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.009 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.013 100 % Rg and UIS TestedID (A) 50 Compliant to RoHS Directive 2002/95/ECConfiguration Singl

8.14. Size:110K vishay
sqd50n02-04l.pdf

SQD50N02-04Lwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 20 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0043 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.006 100 % Rg and UIS TestedID (A) 50 Material categorization:Configuration Single

8.15. Size:170K vishay
sqd50n04-4m1.pdf

SQD50N04-4m1www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0041 AEC-Q101 QualifieddID (A) 50 100 % Rg and UIS TestedConfiguration Single Material categorization:For definitions of compliance please s

8.16. Size:1411K cn vbsemi
sqd50n06-09l.pdf

SQD50N06-09Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

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