SQD50N10-8M9L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SQD50N10-8M9L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 136 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 12 nS
Cossⓘ - Capacitancia de salida: 1441 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0089 Ohm
Encapsulados: TO-252
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SQD50N10-8M9L datasheet
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