SQD50N10-8M9L Datasheet. Specs and Replacement

Type Designator: SQD50N10-8M9L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 1441 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm

Package: TO-252

SQD50N10-8M9L substitution

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SQD50N10-8M9L datasheet

 ..1. Size:157K  vishay
sqd50n10-8m9l.pdf pdf_icon

SQD50N10-8M9L

SQD50N10-8m9L www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 100 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0089 AEC-Q101 Qualified RDS(on) ( ) at VGS = 4.5 V 0.0112 100 % Rg and UIS Tested ID (A) 50 Material categorization Configuration Single ... See More ⇒

 8.1. Size:105K  vishay
sqd50n03-4m0l.pdf pdf_icon

SQD50N10-8M9L

SQD50N03-4m0L www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.0031 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.0040 Material categorization ID (A) 50 For definitions of compliance please see Configuration Single ... See More ⇒

 8.2. Size:166K  vishay
sqd50n04-09h.pdf pdf_icon

SQD50N10-8M9L

SQD50N04-09H www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.009 TrenchFET Power MOSFET ID (A) 50 Package with Low Thermal Resistance Configuration Single 100 % Rg and UIS Tested D AEC-Q101 Qualifiedd TO-252 ... See More ⇒

 8.3. Size:171K  vishay
sqd50n03-06p.pdf pdf_icon

SQD50N10-8M9L

SQD50N03-06P www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.0060 AEC-Q101 Qualified RDS(on) ( ) at VGS = 4.5 V 0.0085 Material categorization ID (A) 50 For definitions of compliance please see Configuration Singl... See More ⇒

Detailed specifications: SQD50N04-3M5L, SQD50N04-4M1, SQD50N04-4M5L, SQD50N04-5M0, SQD50N04-5M6, SQD50N05-11L, SQD50N06-07L, SQD50N06-09L, IRFZ46N, SQD50N30-4M0L, SQD50P03-07, SQD50P04-09L, SQD50P04-13L, SQD50P06-15L, SQD50P08-25L, SQD50P08-28, SQD90P04-9M4L

Keywords - SQD50N10-8M9L MOSFET specs

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