SQD50N10-8M9L datasheet, подбор замены

 ..1. Size:157K  vishay
 sqd50n10-8m9l.pdf 

SQD50N10-8m9L www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 100 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0089 AEC-Q101 Qualified RDS(on) ( ) at VGS = 4.5 V 0.0112 100 % Rg and UIS Tested ID (A) 50 Material categorization Configuration Single

 8.1. Size:105K  vishay
 sqd50n03-4m0l.pdf 

SQD50N03-4m0L www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.0031 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.0040 Material categorization ID (A) 50 For definitions of compliance please see Configuration Single

 8.2. Size:166K  vishay
 sqd50n04-09h.pdf 

SQD50N04-09H www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.009 TrenchFET Power MOSFET ID (A) 50 Package with Low Thermal Resistance Configuration Single 100 % Rg and UIS Tested D AEC-Q101 Qualifiedd TO-252

 8.3. Size:171K  vishay
 sqd50n03-06p.pdf 

SQD50N03-06P www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.0060 AEC-Q101 Qualified RDS(on) ( ) at VGS = 4.5 V 0.0085 Material categorization ID (A) 50 For definitions of compliance please see Configuration Singl

 8.4. Size:170K  vishay
 sqd50n05-11l.pdf 

SQD50N05-11L www.vishay.com Vishay Siliconix Automotive N-Channel 50 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 50 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.011 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.015 AEC-Q101 Qualifiedd ID (A) 50 Material categorization Configuration Single

 8.5. Size:168K  vishay
 sqd50n30-4m0l.pdf 

SQD50N03-4m0L www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.0031 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.0040 Material categorization ID (A) 50 For definitions of compliance please see Configuration Single

 8.6. Size:152K  vishay
 sqd50n03.pdf 

SQD50N03-09 Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 30 Definition RDS(on) ( ) at VGS = 10 V 0.009 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.012 Compliant to RoHS Directive 2002/95/EC ID (A) 50 AEC-Q101 Qualifiedd Configuration Single Find out more

 8.7. Size:158K  vishay
 sqd50n04-5m6.pdf 

SQD50N04-5m6 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0056 AEC-Q101 Qualified ID (A) 50 100 % Rg and UIS Tested Material categorization Configuration Single For definitions of compliance please se

 8.8. Size:167K  vishay
 sqd50n04-4m5l.pdf 

SQD50N04-4m5L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0035 AEC-Q101 Qualified RDS(on) ( ) at VGS = 4.5 V 0.0042 100 % Rg and UIS Tested ID (A) 50 Material categorization Configuration Single

 8.9. Size:166K  vishay
 sqd50n04-5m0.pdf 

SQD50N04-5m0 Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.005 TrenchFET Power MOSFET ID (A) 50 Package with Low Thermal Resistance Configuration Single AEC-Q101 Qualifiedd D Compliant to RoHS Directive 2002/95/EC TO-252

 8.10. Size:174K  vishay
 sqd50n04-3m5l.pdf 

SQD50N04-3m5L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0035 AEC-Q101 Qualified RDS(on) ( ) at VGS = 4.5 V 0.0042 100 % Rg and UIS Tested ID (A) 50 Material categorization Configuration Single F

 8.11. Size:168K  vishay
 sqd50n03-09.pdf 

SQD50N03-09 www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 30 Definition RDS(on) ( ) at VGS = 10 V 0.009 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.012 100 % Rg and UIS Tested ID (A) 50 Compliant to RoHS Directive 2002/95/EC Configuration Single

 8.12. Size:168K  vishay
 sqd50n06-07l.pdf 

SQD50N06-07L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.0076 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.009 Package with Low Thermal Resistance ID (A) 50 100 % Rg and UIS Tested Configuration Single

 8.13. Size:170K  vishay
 sqd50n06-09l.pdf 

SQD50N06-09L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.009 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.013 100 % Rg and UIS Tested ID (A) 50 Compliant to RoHS Directive 2002/95/EC Configuration Singl

 8.14. Size:110K  vishay
 sqd50n02-04l.pdf 

SQD50N02-04L www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 20 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0043 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.006 100 % Rg and UIS Tested ID (A) 50 Material categorization Configuration Single

 8.15. Size:170K  vishay
 sqd50n04-4m1.pdf 

SQD50N04-4m1 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0041 AEC-Q101 Qualifiedd ID (A) 50 100 % Rg and UIS Tested Configuration Single Material categorization For definitions of compliance please s

 8.16. Size:1411K  cn vbsemi
 sqd50n06-09l.pdf 

SQD50N06-09L www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim