SQJ401EP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SQJ401EP Datasheet (PDF)

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SQJ401EPwww.vishay.comVishay SiliconixAutomotive P-Channel 12 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 12DefinitionRDS(on) () at VGS = - 4.5 V 0.0060 TrenchFET Power MOSFETRDS(on) () at VGS = - 2.5 V 0.0080 AEC-Q101 QualifieddID (A) - 32 100 % Rg and UIS TestedConfiguration Single Compl

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SQJ403EEPwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 ESD Protection: 3000 VRDS(on) () at VGS = - 10 V 0.0085 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.0200 100 % Rg and UIS TestedID (A) - 30a Material categorization:Configuration SingleFor d

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SQJ402EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY AEC-Q101 QualifieddVDS (V) 100 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0110 Material categorization:RDS(on) () at VGS = 4.5 V 0.0140For definitions of compliance please seeID (A) 32www.vishay.com/doc?99912

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SQJ403EPwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -30 AEC-Q101 qualified dRDS(on) () at VGS = -10 V 0.0085 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.0200 Material categorization:ID (A) -30 afor definitions of compliance please see Configuration S