SQJ401EP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SQJ401EP

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 63 nS

Cossⓘ - Capacitancia de salida: 3808 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: POWERPAK-SO-8L

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SQJ401EP datasheet

 ..1. Size:175K  vishay
 sqj401ep.pdf pdf_icon

SQJ401EP

SQJ401EP www.vishay.com Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 12 Definition RDS(on) ( ) at VGS = - 4.5 V 0.0060 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 2.5 V 0.0080 AEC-Q101 Qualifiedd ID (A) - 32 100 % Rg and UIS Tested Configuration Single Compl

 9.1. Size:179K  vishay
 sqj403eep.pdf pdf_icon

SQJ401EP

SQJ403EEP www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 30 ESD Protection 3000 V RDS(on) ( ) at VGS = - 10 V 0.0085 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = - 4.5 V 0.0200 100 % Rg and UIS Tested ID (A) - 30a Material categorization Configuration Single For d

 9.2. Size:186K  vishay
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SQJ401EP

SQJ402EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES TrenchFET Power MOSFET PRODUCT SUMMARY AEC-Q101 Qualifiedd VDS (V) 100 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.0110 Material categorization RDS(on) ( ) at VGS = 4.5 V 0.0140 For definitions of compliance please see ID (A) 32 www.vishay.com/doc?99912

 9.3. Size:205K  vishay
 sqj403ep.pdf pdf_icon

SQJ401EP

SQJ403EP www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -30 AEC-Q101 qualified d RDS(on) ( ) at VGS = -10 V 0.0085 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.0200 Material categorization ID (A) -30 a for definitions of compliance please see Configuration S

MOSTRAR MÁS

Otros transistores... SQD50P03-07, SQD50P04-09L, SQD50P04-13L, SQD50P06-15L, SQD50P08-25L, SQD50P08-28, SQD90P04-9M4L, SQD97N06-6M3L, AOD4184A, SQJ402EP, SQJ403EEP, SQJ403EP, SQJ410EP, SQJ412EP, SQJ422EP, SQJ431EP, SQJ443EP