All MOSFET. SQJ401EP Datasheet

 

SQJ401EP Datasheet and Replacement


   Type Designator: SQJ401EP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 109 nC
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 3808 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: POWERPAK-SO-8L
 

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SQJ401EP Datasheet (PDF)

 ..1. Size:175K  vishay
 sqj401ep.pdf pdf_icon

SQJ401EP

SQJ401EPwww.vishay.comVishay SiliconixAutomotive P-Channel 12 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 12DefinitionRDS(on) () at VGS = - 4.5 V 0.0060 TrenchFET Power MOSFETRDS(on) () at VGS = - 2.5 V 0.0080 AEC-Q101 QualifieddID (A) - 32 100 % Rg and UIS TestedConfiguration Single Compl

 9.1. Size:179K  vishay
 sqj403eep.pdf pdf_icon

SQJ401EP

SQJ403EEPwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 ESD Protection: 3000 VRDS(on) () at VGS = - 10 V 0.0085 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.0200 100 % Rg and UIS TestedID (A) - 30a Material categorization:Configuration SingleFor d

 9.2. Size:186K  vishay
 sqj402ep.pdf pdf_icon

SQJ401EP

SQJ402EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURES TrenchFET Power MOSFETPRODUCT SUMMARY AEC-Q101 QualifieddVDS (V) 100 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0110 Material categorization:RDS(on) () at VGS = 4.5 V 0.0140For definitions of compliance please seeID (A) 32www.vishay.com/doc?99912

 9.3. Size:205K  vishay
 sqj403ep.pdf pdf_icon

SQJ401EP

SQJ403EPwww.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -30 AEC-Q101 qualified dRDS(on) () at VGS = -10 V 0.0085 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.0200 Material categorization:ID (A) -30 afor definitions of compliance please see Configuration S

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Datasheet: SQD50P03-07 , SQD50P04-09L , SQD50P04-13L , SQD50P06-15L , SQD50P08-25L , SQD50P08-28 , SQD90P04-9M4L , SQD97N06-6M3L , HY1906P , SQJ402EP , SQJ403EEP , SQJ403EP , SQJ410EP , SQJ412EP , SQJ422EP , SQJ431EP , SQJ443EP .

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