SQJ410EP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SQJ410EP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 806 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm

Encapsulados: POWERPAK-SO-8L

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SQJ410EP datasheet

 ..1. Size:154K  vishay
 sqj410ep.pdf pdf_icon

SQJ410EP

SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.0039 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0042 Material categorization ID (A) 32 For definitions of compliance please see Configuration Single www.

 9.1. Size:267K  vishay
 sqj414ep.pdf pdf_icon

SQJ410EP

SQJ414EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested D Material categorization for definitions of compliance please see 1 S www.vishay.com/doc?99912 2 S 3 S 4 D 1 G Top View Bottom View PRODUCT SUMMARY VDS (V) 30 G RDS

 9.2. Size:155K  vishay
 sqj412ep.pdf pdf_icon

SQJ410EP

SQJ412EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.0041 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0052 Material categorization ID (A) 32 For definitions of compliance please see Configuration Single www.

 9.3. Size:276K  vishay
 sqj418ep.pdf pdf_icon

SQJ410EP

SQJ418EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 100 AEC-Q101 qualified d RDS(on) ( ) at VGS = 10 V 0.014 100 % Rg and UIS tested ID (A) 48 Material categorization Configuration Single for definitions of compliance please see Package PowerPAK SO-8L www.vishay.com/

MOSTRAR MÁS

Otros transistores... SQD50P08-25L, SQD50P08-28, SQD90P04-9M4L, SQD97N06-6M3L, SQJ401EP, SQJ402EP, SQJ403EEP, SQJ403EP, AO4468, SQJ412EP, SQJ422EP, SQJ431EP, SQJ443EP, SQJ456EP, SQJ460AEP, SQJ460EP, SQJ461EP