All MOSFET. SQJ410EP Datasheet

 

SQJ410EP Datasheet and Replacement


   Type Designator: SQJ410EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 73.5 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 806 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: POWERPAK-SO-8L
 

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SQJ410EP Datasheet (PDF)

 ..1. Size:154K  vishay
 sqj410ep.pdf pdf_icon

SQJ410EP

SQJ410EPwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0039 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0042 Material categorization:ID (A) 32For definitions of compliance please seeConfiguration Singlewww.

 9.1. Size:267K  vishay
 sqj414ep.pdf pdf_icon

SQJ410EP

SQJ414EPwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization:for definitions of compliance please see1Swww.vishay.com/doc?999122S3S4D1 GTop View Bottom ViewPRODUCT SUMMARYVDS (V) 30GRDS

 9.2. Size:155K  vishay
 sqj412ep.pdf pdf_icon

SQJ410EP

SQJ412EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifieddRDS(on) () at VGS = 10 V 0.0041 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0052 Material categorization:ID (A) 32For definitions of compliance please seeConfiguration Singlewww.

 9.3. Size:276K  vishay
 sqj418ep.pdf pdf_icon

SQJ410EP

SQJ418EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 100 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.014 100 % Rg and UIS testedID (A) 48 Material categorization:Configuration Singlefor definitions of compliance please seePackage PowerPAK SO-8Lwww.vishay.com/

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Datasheet: SQD50P08-25L , SQD50P08-28 , SQD90P04-9M4L , SQD97N06-6M3L , SQJ401EP , SQJ402EP , SQJ403EEP , SQJ403EP , IRFP064N , SQJ412EP , SQJ422EP , SQJ431EP , SQJ443EP , SQJ456EP , SQJ460AEP , SQJ460EP , SQJ461EP .

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