SQJ951EP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SQJ951EP

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 330 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm

Encapsulados: POWERPAK-SO-8L

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SQJ951EP datasheet

 ..1. Size:173K  vishay
 sqj951ep.pdf pdf_icon

SQJ951EP

SQJ951EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 30 Definition RDS(on) ( ) at VGS = - 10 V 0.017 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.036 AEC-Q101 Qualifiedd ID (A) - 30 100 % Rg and UIS Tested Configuration Dual Complia

 9.1. Size:225K  vishay
 sqj958ep.pdf pdf_icon

SQJ951EP

SQJ958EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.0349 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0385 Material categorization ID (A) per leg 20 For definitions of compliance please see Configuration

 9.2. Size:216K  vishay
 sqj952ep.pdf pdf_icon

SQJ951EP

SQJ952EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.020 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.024 Material categorization ID (A) per leg 23 for definitions of compliance please see Configuratio

 9.3. Size:224K  vishay
 sqj956ep.pdf pdf_icon

SQJ951EP

SQJ956EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.0267 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0290 Material categorization ID (A) per leg 23 For definitions of compliance please see Configuration

MOSTRAR MÁS

Otros transistores... SQJ884EP, SQJ886EP, SQJ910AEP, SQJ912AEP, SQJ912EP, SQJ940EP, SQJ941EP, SQJ942EP, AON7408, SQJ952EP, SQJ960EP, SQJ962EP, SQJ963EP, SQJ964EP, SQJ968EP, SQJ970EP, SQJ980AEP