SQJ951EP Specs and Replacement

Type Designator: SQJ951EP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: POWERPAK-SO-8L

SQJ951EP substitution

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SQJ951EP datasheet

 ..1. Size:173K  vishay
 sqj951ep.pdf pdf_icon

SQJ951EP

SQJ951EP www.vishay.com Vishay Siliconix Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 30 Definition RDS(on) ( ) at VGS = - 10 V 0.017 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.036 AEC-Q101 Qualifiedd ID (A) - 30 100 % Rg and UIS Tested Configuration Dual Complia... See More ⇒

 9.1. Size:225K  vishay
 sqj958ep.pdf pdf_icon

SQJ951EP

SQJ958EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.0349 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0385 Material categorization ID (A) per leg 20 For definitions of compliance please see Configuration ... See More ⇒

 9.2. Size:216K  vishay
 sqj952ep.pdf pdf_icon

SQJ951EP

SQJ952EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.020 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.024 Material categorization ID (A) per leg 23 for definitions of compliance please see Configuratio... See More ⇒

 9.3. Size:224K  vishay
 sqj956ep.pdf pdf_icon

SQJ951EP

SQJ956EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 AEC-Q101 qualified RDS(on) ( ) at VGS = 10 V 0.0267 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0290 Material categorization ID (A) per leg 23 For definitions of compliance please see Configuration ... See More ⇒

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Detailed specifications: SQJ884EP, SQJ886EP, SQJ910AEP, SQJ912AEP, SQJ912EP, SQJ940EP, SQJ941EP, SQJ942EP, AON7408, SQJ952EP, SQJ960EP, SQJ962EP, SQJ963EP, SQJ964EP, SQJ968EP, SQJ970EP, SQJ980AEP

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