IXTH12N45MB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXTH12N45MB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Paquete / Cubierta: TO247

Búsqueda de reemplazo de MOSFET IXTH12N45MB

IXTH12N45MB Datasheet (PDF)

..1. Size:681K 1
ixth12n45ma ixth12n45mb ixth12n50ma ixth12n50mb ixth15n35ma ixth15n35mb ixth15n40ma ixth15n40mb ixtz42n20mb ixtz67n10ma ixtz67n10mb.pdf

5.1. Size:65K ixys
ixth12n45 ixth12n45a ixth12n50 ixtm12n45 ixtm12n45a ixtm12n50.pdf

7.1. Size:175K ixys
ixtt12n150 ixth12n150.pdf

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETIXTH12N150 RDS(on) 2.2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VG

7.2. Size:105K ixys
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

7.3. Size:200K ixys
ixta12n65x2 ixth12n65x2 ixtp12n65x2.pdf

Advance Technical InformationX2-Class VDSS = 650VIXTA12N65X2Power MOSFET ID25 = 12AIXTP12N65X2 RDS(on) 300m IXTH12N65X2N-Channel Enhancement ModeTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30

7.4. Size:62K ixys
ixth12n50a ixtm12n50a.pdf

VDSS ID25 RDS(on)StandardIXTH 12 N50A 500 V 12 A 0.4 Power MOSFETIXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C12 AIDM TC

7.5. Size:122K ixys
ixth12n150 ixtt12n150.pdf

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETsIXTH12N150 RDS(on) 2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VGSM Transient

7.6. Size:344K ixys
ixta12n70x2 ixtp12n70x2 ixth12n70x2.pdf

Preliminary Technical InformationX2-Class VDSS = 700VIXTA12N70X2Power MOSFET ID25 = 12AIXTP12N70X2 RDS(on) 300m IXTH12N70X2N-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 700 VVDGR TJ = 25C to 150C, RGS = 1M 700 VVGSS Continuous 30 V

7.7. Size:545K ixys
ixth12n120.pdf

VDSS = 1200 VIXTH 12N120ID (cont) = 12 APower MOSFET, Avalanche Rated RDS(on)= 1.4 High VoltagePreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 30 VD (TAB)VGSM Transient 40 VID25 TC = 25C12 AIDM TC = 25C, pulse width limit

7.8. Size:299K ixys
ixth10n90 ixtm10n90 ixth12n90 ixtm12n90.pdf

Otros transistores... IXTA2N80 , IXTH10N100 , IXTH10N90 , IXTH10P50 , IXTH11N80 , IXTH11P50 , IXTH12N100 , IXTH12N45MA , SPW47N60C3 , IXTH12N50A , IXTH12N50MA , IXTH12N50MB , IXTH12N90 , IXTH13N110 , IXTH13N80 , IXTH14N100 , IXTH14N80 .

Liste

Recientemente añadidas las descripciónes de los transistores: