IXTH12N45MB Datasheet. Specs and Replacement

Type Designator: IXTH12N45MB  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO247

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IXTH12N45MB substitution

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IXTH12N45MB datasheet

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IXTH12N45MB

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IXTH12N45MB

High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFET IXTH12N150 RDS(on) 2.2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VG... See More ⇒

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 ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf pdf_icon

IXTH12N45MB

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 10N... See More ⇒

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Detailed specifications: IXTA2N80, IXTH10N100, IXTH10N90, IXTH10P50, IXTH11N80, IXTH11P50, IXTH12N100, IXTH12N45MA, AO4468, IXTH12N50A, IXTH12N50MA, IXTH12N50MB, IXTH12N90, IXTH13N110, IXTH13N80, IXTH14N100, IXTH14N80

Keywords - IXTH12N45MB MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.