SRM10N60TF Todos los transistores

 

SRM10N60TF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRM10N60TF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 168 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.77 Ohm
   Paquete / Cubierta: TO-220F
     - Selección de transistores por parámetros

 

SRM10N60TF Datasheet (PDF)

 6.1. Size:251K  sanrise-tech
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SRM10N60TF

Datasheet 10A, 600V, N-Channel Power MOSFET SRM10N60General Description Symbol The Sanrise SRM10N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM10N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

 7.1. Size:251K  sanrise-tech
 srm10n65.pdf pdf_icon

SRM10N60TF

Datasheet 10A, 650V, N-Channel Power MOSFET SRM10N65General Description Symbol The Sanrise SRM10N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM10N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

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History: AP98T03GP | HCS80R1K4ST

 

 
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