All MOSFET. SRM10N60TF Datasheet

 

SRM10N60TF MOSFET. Datasheet pdf. Equivalent


   Type Designator: SRM10N60TF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.29 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 168 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.77 Ohm
   Package: TO-220F

 SRM10N60TF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SRM10N60TF Datasheet (PDF)

 6.1. Size:251K  sanrise-tech
 srm10n60.pdf

SRM10N60TF SRM10N60TF

Datasheet 10A, 600V, N-Channel Power MOSFET SRM10N60General Description Symbol The Sanrise SRM10N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM10N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

 7.1. Size:251K  sanrise-tech
 srm10n65.pdf

SRM10N60TF SRM10N60TF

Datasheet 10A, 650V, N-Channel Power MOSFET SRM10N65General Description Symbol The Sanrise SRM10N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM10N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

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History: AP20T03GH-HF | FDB0630N1507L | CPT2301 | AOTF5N50FD | WNM3011 | BUZ905P | KIA2910N-3P

 

 
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