ST2342 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ST2342

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: SOT-23

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ST2342 datasheet

 ..1. Size:426K  stansontech
 st2342.pdf pdf_icon

ST2342

ST2342 N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION ST2342 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and noteb

 9.1. Size:598K  stansontech
 st2341srg.pdf pdf_icon

ST2342

ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and

 9.2. Size:576K  stansontech
 st2341a.pdf pdf_icon

ST2342

ST2341A P Channel Enhancement Mode MOSFET -6.0A DESCRIPTION ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n

 9.3. Size:602K  stansontech
 st2341s23rg.pdf pdf_icon

ST2342

ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho

MOSTRAR MÁS

Otros transistores... ST2304, ST2304SRG, ST2305, ST2305A, ST2318SRG, ST2319SRG, ST2341A, ST2341S23RG, IRF9540, ST25N10, ST3400S23RG, ST3400SRG, ST3401M23RG, ST3401SRG, ST3406, ST3406SRG, ST3407S23RG