ST2342. Аналоги и основные параметры

Наименование производителя: ST2342

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 40 ns

Cossⓘ - Выходная емкость: 120 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.026 Ohm

Тип корпуса: SOT-23

Аналог (замена) для ST2342

- подборⓘ MOSFET транзистора по параметрам

 

ST2342 даташит

 ..1. Size:426K  stansontech
 st2342.pdf pdf_icon

ST2342

ST2342 N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION ST2342 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and noteb

 9.1. Size:598K  stansontech
 st2341srg.pdf pdf_icon

ST2342

ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and

 9.2. Size:576K  stansontech
 st2341a.pdf pdf_icon

ST2342

ST2341A P Channel Enhancement Mode MOSFET -6.0A DESCRIPTION ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n

 9.3. Size:602K  stansontech
 st2341s23rg.pdf pdf_icon

ST2342

ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... ST2304, ST2304SRG, ST2305, ST2305A, ST2318SRG, ST2319SRG, ST2341A, ST2341S23RG, IRF9540, ST25N10, ST3400S23RG, ST3400SRG, ST3401M23RG, ST3401SRG, ST3406, ST3406SRG, ST3407S23RG