ST2342 Specs and Replacement

Type Designator: ST2342

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: SOT-23

ST2342 substitution

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ST2342 datasheet

 ..1. Size:426K  stansontech
 st2342.pdf pdf_icon

ST2342

ST2342 N Channel Enhancement Mode MOSFET 5.8A DESCRIPTION ST2342 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and noteb... See More ⇒

 9.1. Size:598K  stansontech
 st2341srg.pdf pdf_icon

ST2342

ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and... See More ⇒

 9.2. Size:576K  stansontech
 st2341a.pdf pdf_icon

ST2342

ST2341A P Channel Enhancement Mode MOSFET -6.0A DESCRIPTION ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n... See More ⇒

 9.3. Size:602K  stansontech
 st2341s23rg.pdf pdf_icon

ST2342

ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho... See More ⇒

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Detailed specifications: ST2304, ST2304SRG, ST2305, ST2305A, ST2318SRG, ST2319SRG, ST2341A, ST2341S23RG, IRF9540, ST25N10, ST3400S23RG, ST3400SRG, ST3401M23RG, ST3401SRG, ST3406, ST3406SRG, ST3407S23RG

Keywords - ST2342 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.