ST3401M23RG MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ST3401M23RG datasheet

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ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon

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ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

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JST3401 -30V,-4.2A P-Channel Mosfet FEATURES SOT-23 RDS(ON) 63m @VGS=-10V RDS(ON) 67m @VGS=-4.5V RDS(ON) 85m @VGS=-2.5V APPLICATIONS Load/Power Switching Interfacing Switching P-CHANNEL MOSFET MARKING Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage V 12 GS I -4.2 D Continuou

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WST3401 P-Ch MOSFET General Description Product Summery The WST3401 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 44m -5.5A for most of the small power switching and load switch applications . Applications The WST3401 meet the RoHS and Green Product requirement , with full