ST3401M23RG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ST3401M23RG
Маркировка: A1YA
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.25 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 14 nC
Время нарастания (tr): 15 ns
Выходная емкость (Cd): 131 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.053 Ohm
Тип корпуса: SOT-23
Аналог (замена) для ST3401M23RG
ST3401M23RG Datasheet (PDF)
st3401m23rg.pdf
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ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon
st3401srg.pdf
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ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an
jst3401.pdf
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JST3401-30V,-4.2AP-Channel MosfetFEATURESSOT-23RDS(ON) 63m @VGS=-10VRDS(ON) 67m @VGS=-4.5VRDS(ON) 85m @VGS=-2.5VAPPLICATIONSLoad/Power SwitchingInterfacing SwitchingP-CHANNEL MOSFETMARKINGMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS -30VGate-Source Voltage V 12GSI -4.2DContinuou
wst3401.pdf
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WST3401 P-Ch MOSFETGeneral Description Product SummeryThe WST3401 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 44m -5.5Afor most of the small power switching and load switch applications . Applications The WST3401 meet the RoHS and Green Product requirement , with full
wst3401a.pdf
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WST3401A P-Ch MOSFETGeneral Description Product SummeryThe WST3401A is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 48m -5.0Agate charge for most of the small power switching and load switch applications . Applications The WST3401A meet the RoHS and Green Product requirement , with fu
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