ST3401M23RG MOSFET. Datasheet pdf. Equivalent
Type Designator: ST3401M23RG
Marking Code: A1YA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 131 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: SOT-23
ST3401M23RG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ST3401M23RG Datasheet (PDF)
st3401m23rg.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phon
st3401srg.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an
jst3401.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
JST3401-30V,-4.2AP-Channel MosfetFEATURESSOT-23RDS(ON) 63m @VGS=-10VRDS(ON) 67m @VGS=-4.5VRDS(ON) 85m @VGS=-2.5VAPPLICATIONSLoad/Power SwitchingInterfacing SwitchingP-CHANNEL MOSFETMARKINGMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS -30VGate-Source Voltage V 12GSI -4.2DContinuou
wst3401.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
WST3401 P-Ch MOSFETGeneral Description Product SummeryThe WST3401 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 44m -5.5Afor most of the small power switching and load switch applications . Applications The WST3401 meet the RoHS and Green Product requirement , with full
wst3401a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
WST3401A P-Ch MOSFETGeneral Description Product SummeryThe WST3401A is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 48m -5.0Agate charge for most of the small power switching and load switch applications . Applications The WST3401A meet the RoHS and Green Product requirement , with fu
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .