SUB85N10-10 Todos los transistores

SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC 100 85a 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S SUB

SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC 100 85a 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S SUB

SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC 100 85a 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S SUB

SUP/SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A) Available 175 C Maximum Junction Temperature 0.0105 at VGS = 10 V RoHS* 100 85a COMPLIANT 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S SUB85N10-10 N-Channel MOSFET

SUP/SUB85N03-07P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 0.007 @ VGS = 10 V 85 a 30 30 0.01 @ VGS = 4.5 V 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N03-07P Top View N-Channel MOSFET SUP85N03-07P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symb

SUP/SUB85N04-04 Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.004 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S Top View Ordering Information Ordering Information N-Channel MOSFET SUP85N04-04 SUB85N04-04 SUP85N04-04 E3 (Lead (Pb)-Free) SUB85N04-04 E3 (Lead (Pb)-Free) ABSOLUTE

SUP/SUB85N02-06 New Product Vishay Siliconix N-Channel 20-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 0.006 @ VGS = 4.5 V 85 20 20 0.009 @ VGS = 2.5 V 85 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N02-06 Top View N-Channel MOSFET SUP85N02-06 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol

SUP/SUB85N04-03 New Product Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0035 @ VGS = 10 V a 40 85 a 40 85 0.0053 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N04-03 Top View N-Channel MOSFET SUP85N04-03 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Sy

SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET V(BR)DSS (V) rDS(on) (W) ID (A)a D 175_C Maximum Junction Temperature 0.0043 @ VGS = 10 V 85a D TO-263 (D2PAK) 100% Rg Tested 30 30 0.007 @ VGS = 4.5 V 85a D TO-220AB TO-263 (D2PAK) G DRAIN connected to TAB G D S Top View G D S S SUB85N03-04P Top View N

SUP/SUB85N06-05 New Product Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0052 @ VGS = 10 V 60 "85 a " 0.0072 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N06-05 Top View N-Channel MOSFET SUP85N06-05 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol L

SUP/SUB85N08-08 New Product Vishay Siliconix N-Channel 75-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.008 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N08-08 Top View N-Channel MOSFET SUP85N08-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Volt

SUP/SUB85N02-03 Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 0.003 @ VGS = 4.5 V 85 20 0.0034 @ VGS = 2.5 V 85 0.0038 @ VGS = 1.8 V 85 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S Ordering Information Top View S SUB85N02-03 E3 (Lead Free) Ordering Information N-Channel MOSFET SUP85N02-03 E3 (Le

SUP/SUB85N03-07P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 0.007 @ VGS = 10 V 85 a 30 30 0.01 @ VGS = 4.5 V 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N03-07P Top View N-Channel MOSFET SUP85N03-07P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symb

SUB85N03-07P www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0038 at VGS = 10 V 98 30 82 nC 0.0044 at VGS = 4.5 V 98 APPLICATIONS OR-ing Server DC/DC D I2PAK D2PAK (TO-262) (TO-263) G G D S S V