SUB85N10-10 Todos los transistores

 

SUB85N10-10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SUB85N10-10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 250 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 85 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 105 nC
   Tiempo de subida (tr): 90 nS
   Conductancia de drenaje-sustrato (Cd): 665 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0105 Ohm
   Paquete / Cubierta: TO-263

 Búsqueda de reemplazo de MOSFET SUB85N10-10

 

SUB85N10-10 Datasheet (PDF)

 ..1. Size:121K  vishay
sub85n10-10.pdf

SUB85N10-10
SUB85N10-10

SUP85N10-10, SUB85N10-10Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC10085a0.012 at VGS = 4.5 V TO-220ABD TO-263G DRAIN connected to TAB G D S Top ViewS G D S SUB

 ..2. Size:95K  vishay
sup85n10-10 sup85n10-10 sub85n10-10.pdf

SUB85N10-10
SUB85N10-10

SUP85N10-10, SUB85N10-10Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC10085a0.012 at VGS = 4.5 V TO-220ABD TO-263G DRAIN connected to TAB G D S Top ViewS G D S SUB

 ..3. Size:126K  vishay
sup85n10-10 sub85n10-10.pdf

SUB85N10-10
SUB85N10-10

SUP85N10-10, SUB85N10-10Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC10085a0.012 at VGS = 4.5 V TO-220ABD TO-263G DRAIN connected to TAB G D S Top ViewS G D S SUB

 ..4. Size:100K  vishay
sup85n10-10 sub85n10-10 2.pdf

SUB85N10-10
SUB85N10-10

SUP/SUB85N10-10Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Maximum Junction Temperature0.0105 at VGS = 10 V RoHS*10085a COMPLIANT0.012 at VGS = 4.5 V TO-220ABDTO-263GDRAIN connected to TABG D STop ViewSG D SSUB85N10-10N-Channel MOSFET

 8.1. Size:63K  1
sup85n03-07p sub85n03-07p.pdf

SUB85N10-10
SUB85N10-10

SUP/SUB85N03-07PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.007 @ VGS = 10 V 85 a30300.01 @ VGS = 4.5 V 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N03-07PTop ViewN-Channel MOSFETSUP85N03-07PABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symb

 8.2. Size:67K  vishay
sup85n04-04 sub85n04-04.pdf

SUB85N10-10
SUB85N10-10

SUP/SUB85N04-04Vishay SiliconixN-Channel 40-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)40 0.004 @ VGS = 10 V 85 aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSTop ViewOrdering Information Ordering InformationN-Channel MOSFETSUP85N04-04 SUB85N04-04SUP85N04-04E3 (Lead (Pb)-Free) SUB85N04-04E3 (Lead (Pb)-Free)ABSOLUTE

 8.3. Size:85K  vishay
sup85n02-06 sub85n02-06.pdf

SUB85N10-10
SUB85N10-10

SUP/SUB85N02-06New ProductVishay SiliconixN-Channel 20-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.006 @ VGS = 4.5 V 8520200.009 @ VGS = 2.5 V 85DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N02-06Top ViewN-Channel MOSFETSUP85N02-06ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol

 8.4. Size:88K  vishay
sup85n04-03 sub85n04-03.pdf

SUB85N10-10
SUB85N10-10

SUP/SUB85N04-03New ProductVishay SiliconixN-Channel 40-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.0035 @ VGS = 10 Va40 85 a40 850.0053 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N04-03Top ViewN-Channel MOSFETSUP85N04-03ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Sy

 8.5. Size:70K  vishay
sub85n03-04p sup85n03-04p sup85n03-04p.pdf

SUB85N10-10
SUB85N10-10

SUP/SUB85N03-04PVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETV(BR)DSS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction Temperature0.0043 @ VGS = 10 V 85aD TO-263 (D2PAK) 100% Rg Tested30300.007 @ VGS = 4.5 V 85aDTO-220ABTO-263(D2PAK)GDRAIN connected to TABG D STop ViewG D SSSUB85N03-04PTop ViewN

 8.6. Size:74K  vishay
sup85n06-05 sub85n06-05.pdf

SUB85N10-10
SUB85N10-10

SUP/SUB85N06-05New ProductVishay SiliconixN-Channel 60-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.0052 @ VGS = 10 V60 "85 a"0.0072 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N06-05Top ViewN-Channel MOSFETSUP85N06-05ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol L

 8.7. Size:88K  vishay
sub85n08-08 sup85n08-08.pdf

SUB85N10-10
SUB85N10-10

SUP/SUB85N08-08New ProductVishay SiliconixN-Channel 75-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)75 0.008 @ VGS = 10 V 85 aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N08-08Top ViewN-Channel MOSFETSUP85N08-08ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Volt

 8.8. Size:92K  vishay
sup85n02-03 sub85n02-03.pdf

SUB85N10-10
SUB85N10-10

SUP/SUB85N02-03Vishay SiliconixN-Channel 20-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.003 @ VGS = 4.5 V 8520 0.0034 @ VGS = 2.5 V 850.0038 @ VGS = 1.8 V 85DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SOrdering Information:Top ViewSSUB85N02-03E3 (Lead Free)Ordering Information:N-Channel MOSFETSUP85N02-03E3 (Le

 8.9. Size:90K  vishay
sup85n03 sub85n03.pdf

SUB85N10-10
SUB85N10-10

SUP/SUB85N03-07PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.007 @ VGS = 10 V 85 a30300.01 @ VGS = 4.5 V 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N03-07PTop ViewN-Channel MOSFETSUP85N03-07PABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symb

 8.10. Size:1410K  cn vbsemi
sub85n03-07p.pdf

SUB85N10-10
SUB85N10-10

SUB85N03-07Pwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0038 at VGS = 10 V 9830 82 nC0.0044 at VGS = 4.5 V 98APPLICATIONS OR-ing Server DC/DCDI2PAK D2PAK(TO-262) (TO-263)GGDSSV

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


SUB85N10-10
  SUB85N10-10
  SUB85N10-10
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top