SUB85N10-10 PDF and Equivalents Search

 

SUB85N10-10 Specs and Replacement

Type Designator: SUB85N10-10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 665 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO-263

SUB85N10-10 substitution

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SUB85N10-10 datasheet

 ..1. Size:121K  vishay
sub85n10-10.pdf pdf_icon

SUB85N10-10

SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC 100 85a 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S SUB... See More ⇒

 ..2. Size:95K  vishay
sup85n10-10 sup85n10-10 sub85n10-10.pdf pdf_icon

SUB85N10-10

SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC 100 85a 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S SUB... See More ⇒

 ..3. Size:126K  vishay
sup85n10-10 sub85n10-10.pdf pdf_icon

SUB85N10-10

SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC 100 85a 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S SUB... See More ⇒

 ..4. Size:100K  vishay
sup85n10-10 sub85n10-10 2.pdf pdf_icon

SUB85N10-10

SUP/SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A) Available 175 C Maximum Junction Temperature 0.0105 at VGS = 10 V RoHS* 100 85a COMPLIANT 0.012 at VGS = 4.5 V TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View S G D S SUB85N10-10 N-Channel MOSFET ... See More ⇒

Detailed specifications: ST36N06, ST36N10D, ST47P06D, ST75N75, ST9435A, ST9435GP, SUB65P04-15, SUB75P03-07, IRF530, SUD06N10-225L, SUD08P06-155L, SUD09P10-195, SUD15N15-95, SUD17N25-165, SUD19N20-90, SUD19P06-60, SUD19P06-60L

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