SUP85N10-10, SUB85N10-10Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC10085a0.012 at VGS = 4.5 V TO-220ABD TO-263G DRAIN connected to TAB G D S Top ViewS G D S SUB

SUP85N10-10, SUB85N10-10Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC10085a0.012 at VGS = 4.5 V TO-220ABD TO-263G DRAIN connected to TAB G D S Top ViewS G D S SUB

SUP85N10-10, SUB85N10-10Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.0105 at VGS = 10 V Compliant to RoHS Directive 2002/95/EC10085a0.012 at VGS = 4.5 V TO-220ABD TO-263G DRAIN connected to TAB G D S Top ViewS G D S SUB

SUP/SUB85N10-10Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Maximum Junction Temperature0.0105 at VGS = 10 V RoHS*10085a COMPLIANT0.012 at VGS = 4.5 V TO-220ABDTO-263GDRAIN connected to TABG D STop ViewSG D SSUB85N10-10N-Channel MOSFET

SUP/SUB85N03-07PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.007 @ VGS = 10 V 85 a30300.01 @ VGS = 4.5 V 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N03-07PTop ViewN-Channel MOSFETSUP85N03-07PABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symb

SUP/SUB85N04-04Vishay SiliconixN-Channel 40-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)40 0.004 @ VGS = 10 V 85 aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSTop ViewOrdering Information Ordering InformationN-Channel MOSFETSUP85N04-04 SUB85N04-04SUP85N04-04E3 (Lead (Pb)-Free) SUB85N04-04E3 (Lead (Pb)-Free)ABSOLUTE

SUP/SUB85N02-06New ProductVishay SiliconixN-Channel 20-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.006 @ VGS = 4.5 V 8520200.009 @ VGS = 2.5 V 85DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N02-06Top ViewN-Channel MOSFETSUP85N02-06ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol

SUP/SUB85N04-03New ProductVishay SiliconixN-Channel 40-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.0035 @ VGS = 10 Va40 85 a40 850.0053 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N04-03Top ViewN-Channel MOSFETSUP85N04-03ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Sy

SUP/SUB85N03-04PVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETV(BR)DSS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction Temperature0.0043 @ VGS = 10 V 85aD TO-263 (D2PAK) 100% Rg Tested30300.007 @ VGS = 4.5 V 85aDTO-220ABTO-263(D2PAK)GDRAIN connected to TABG D STop ViewG D SSSUB85N03-04PTop ViewN

SUP/SUB85N06-05New ProductVishay SiliconixN-Channel 60-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.0052 @ VGS = 10 V60 "85 a"0.0072 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N06-05Top ViewN-Channel MOSFETSUP85N06-05ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol L

SUP/SUB85N08-08New ProductVishay SiliconixN-Channel 75-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)75 0.008 @ VGS = 10 V 85 aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N08-08Top ViewN-Channel MOSFETSUP85N08-08ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Volt

SUP/SUB85N02-03Vishay SiliconixN-Channel 20-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.003 @ VGS = 4.5 V 8520 0.0034 @ VGS = 2.5 V 850.0038 @ VGS = 1.8 V 85DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SOrdering Information:Top ViewSSUB85N02-03E3 (Lead Free)Ordering Information:N-Channel MOSFETSUP85N02-03E3 (Le

SUP/SUB85N03-07PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.007 @ VGS = 10 V 85 a30300.01 @ VGS = 4.5 V 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N03-07PTop ViewN-Channel MOSFETSUP85N03-07PABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symb

SUB85N03-07Pwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0038 at VGS = 10 V 9830 82 nC0.0044 at VGS = 4.5 V 98APPLICATIONS OR-ing Server DC/DCDI2PAK D2PAK(TO-262) (TO-263)GGDSSV