SUD15N15-95 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SUD15N15-95
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 62 W
Voltaje máximo drenador - fuente |Vds|: 150 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 15 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 20 nC
Tiempo de subida (tr): 35 nS
Conductancia de drenaje-sustrato (Cd): 115 pF
Resistencia entre drenaje y fuente RDS(on): 0.095 Ohm
Paquete / Cubierta: TO-252
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SUD15N15-95 Datasheet (PDF)
sud15n15-95.pdf
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SUD15N15-95Vishay SiliconixN-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.095 at VGS = 10 V 15 100 % Rg Tested1500.100 at VGS = 6 V 15 Material categorization: For definitions of complianceplease see www.vishay.com/doc?99912APPLICATIONS Primary Si
sud15n15-95.pdf
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SUD15N15-95www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses150 23 nC0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONS
sud15n15-95.pdf
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SUD15N15-95FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
sud15n06-90l.pdf
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SUD15N06-90LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFET, Logic LevelFEATURESPRODUCT SUMMARYPb-freeD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)AvailableD 175_C Maximum Junction0.065 @ VGS = 10 V 15 Temperature60600.090 @ VGS = 4.5 V 14DTO-252GDrain Connected to TabSG D STop View N-Channel MOSFETOrdering Information: SUD15N06-90LSUD15N06-9
sud15p01.pdf
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SUD15P01-52New ProductVishay SiliconixP-Channel 8-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 175_C Junction TemperatureD Low Gate Threshold0.052 @ VGS = 4.5 V1580.070 @ VGS = 2.5 V 13APPLICATIONS0.105 @ VGS = 1.8 V 10.5D Pass Transistor for LDOsSTO-252GDrain Connected to TabG D S
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: P5015BD
History: P5015BD
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Liste
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