SUD15N15-95 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SUD15N15-95
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm
   Paquete / Cubierta: TO-252

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SUD15N15-95 Datasheet (PDF)

..1. Size:157K vishay
sud15n15-95.pdf

SUD15N15-95Vishay SiliconixN-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.095 at VGS = 10 V 15 100 % Rg Tested1500.100 at VGS = 6 V 15 Material categorization: For definitions of complianceplease see www.vishay.com/doc?99912APPLICATIONS Primary Si

..2. Size:1378K cn vbsemi
sud15n15-95.pdf

SUD15N15-95www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses150 23 nC0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONS

..3. Size:207K inchange semiconductor
sud15n15-95.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SUD15N15-95FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

8.1. Size:90K vishay
sud15n06-90l.pdf

SUD15N06-90LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFET, Logic LevelFEATURESPRODUCT SUMMARYPb-freeD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)AvailableD 175_C Maximum Junction0.065 @ VGS = 10 V 15 Temperature60600.090 @ VGS = 4.5 V 14DTO-252GDrain Connected to TabSG D STop View N-Channel MOSFETOrdering Information: SUD15N06-90LSUD15N06-9

9.1. Size:45K vishay
sud15p01.pdf

SUD15P01-52New ProductVishay SiliconixP-Channel 8-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 175_C Junction TemperatureD Low Gate Threshold0.052 @ VGS = 4.5 V1580.070 @ VGS = 2.5 V 13APPLICATIONS0.105 @ VGS = 1.8 V 10.5D Pass Transistor for LDOsSTO-252GDrain Connected to TabG D S

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