SUD15N15-95 MOSFET Datasheet: N-Ch, 150V, 15A. Full specification with pinout and replacement list

SUD15N15-95 Specs and Replacement

Type Designator: SUD15N15-95

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm

Package: TO-252

SUD15N15-95 substitution

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SUD15N15-95 datasheet

..1. Size:157K vishay
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SUD15N15-95 Vishay Siliconix N-Channel 150 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.095 at VGS = 10 V 15 100 % Rg Tested 150 0.100 at VGS = 6 V 15 Material categorization For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Primary Si... See More ⇒

..2. Size:1378K cn vbsemi
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SUD15N15-95 www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses 150 23 nC 0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS... See More ⇒

..3. Size:207K inchange semiconductor
sud15n15-95.pdf pdf_icon

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SUD15N15-95 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒

8.1. Size:90K vishay
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SUD15N06-90L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY Pb-free D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) Available D 175_C Maximum Junction 0.065 @ VGS = 10 V 15 Temperature 60 60 0.090 @ VGS = 4.5 V 14 D TO-252 G Drain Connected to Tab S G D S Top View N-Channel MOSFET Ordering Information SUD15N06-90L SUD15N06-9... See More ⇒