SUD15N15-95
MOSFET. Datasheet pdf. Equivalent
Type Designator: SUD15N15-95
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 62
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 20
nC
trⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 115
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095
Ohm
Package:
TO-252
SUD15N15-95
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUD15N15-95
Datasheet (PDF)
..1. Size:157K vishay
sud15n15-95.pdf
SUD15N15-95Vishay SiliconixN-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.095 at VGS = 10 V 15 100 % Rg Tested1500.100 at VGS = 6 V 15 Material categorization: For definitions of complianceplease see www.vishay.com/doc?99912APPLICATIONS Primary Si
..2. Size:1378K cn vbsemi
sud15n15-95.pdf
SUD15N15-95www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses150 23 nC0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONS
..3. Size:207K inchange semiconductor
sud15n15-95.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SUD15N15-95FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
8.1. Size:90K vishay
sud15n06-90l.pdf
SUD15N06-90LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFET, Logic LevelFEATURESPRODUCT SUMMARYPb-freeD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)AvailableD 175_C Maximum Junction0.065 @ VGS = 10 V 15 Temperature60600.090 @ VGS = 4.5 V 14DTO-252GDrain Connected to TabSG D STop View N-Channel MOSFETOrdering Information: SUD15N06-90LSUD15N06-9
9.1. Size:45K vishay
sud15p01.pdf
SUD15P01-52New ProductVishay SiliconixP-Channel 8-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 175_C Junction TemperatureD Low Gate Threshold0.052 @ VGS = 4.5 V1580.070 @ VGS = 2.5 V 13APPLICATIONS0.105 @ VGS = 1.8 V 10.5D Pass Transistor for LDOsSTO-252GDrain Connected to TabG D S
Datasheet: WPB4002
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