SUD15N15-95 - описание и поиск аналогов

SUD15N15-95 Vishay Siliconix N-Channel 150 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.095 at VGS = 10 V 15 100 % Rg Tested 150 0.100 at VGS = 6 V 15 Material categorization For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Primary Si

SUD15N15-95 www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses 150 23 nC 0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SUD15N15-95 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

SUD15N06-90L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY Pb-free D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) Available D 175_C Maximum Junction 0.065 @ VGS = 10 V 15 Temperature 60 60 0.090 @ VGS = 4.5 V 14 D TO-252 G Drain Connected to Tab S G D S Top View N-Channel MOSFET Ordering Information SUD15N06-90L SUD15N06-9

SUD15P01-52 New Product Vishay Siliconix P-Channel 8-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 175_C Junction Temperature D Low Gate Threshold 0.052 @ VGS = 4.5 V 15 8 0.070 @ VGS = 2.5 V 13 APPLICATIONS 0.105 @ VGS = 1.8 V 10.5 D Pass Transistor for LDOs S TO-252 G Drain Connected to Tab G D S