SUD15N15-95Vishay SiliconixN-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.095 at VGS = 10 V 15 100 % Rg Tested1500.100 at VGS = 6 V 15 Material categorization: For definitions of complianceplease see www.vishay.com/doc?99912APPLICATIONS Primary Si

SUD15N15-95www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses150 23 nC0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONS

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SUD15N15-95FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

SUD15N06-90LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFET, Logic LevelFEATURESPRODUCT SUMMARYPb-freeD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)AvailableD 175_C Maximum Junction0.065 @ VGS = 10 V 15 Temperature60600.090 @ VGS = 4.5 V 14DTO-252GDrain Connected to TabSG D STop View N-Channel MOSFETOrdering Information: SUD15N06-90LSUD15N06-9

SUD15P01-52New ProductVishay SiliconixP-Channel 8-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 175_C Junction TemperatureD Low Gate Threshold0.052 @ VGS = 4.5 V1580.070 @ VGS = 2.5 V 13APPLICATIONS0.105 @ VGS = 1.8 V 10.5D Pass Transistor for LDOsSTO-252GDrain Connected to TabG D S