SUD19N20-90 Todos los transistores

 ..1. Size:161K  vishay
 sud19n20-90.pdf

SUD19N20-90 Vishay Siliconix N-Channel 200 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.090 at VGS = 10 V 19 PWM Optimized 200 0.105 at VGS = 6 V 17.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch TO-252 D Drain Co

 9.1. Size:80K  vishay
 sud19p06-60l.pdf

New Product SUD19P06-60L Vishay Siliconix P-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 0.060 at VGS = - 10 V - 19 RoHS - 60 26 COMPLIANT 0.077 at VGS = - 4.5 V - 16.8 TO-252 S G Drain Connected to Tab G D S Top View D Ordering Information SUD19P06-60L-E3 (L

 9.2. Size:114K  vishay
 sud19p06.pdf

New Product SUD19P06-60 Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)d Qg (Typ) 100 % UIS Tested 0.060 at VGS = - 10 V - 19 RoHS - 60 26 COMPLIANT 0.077 at VGS = - 4.5 V - 16.8 APPLICATIONS High Side Switch for Full Bridge Converter DC/DC Converter for LCD Display TO-252 S G D

 9.3. Size:166K  vishay
 sud19p06-60.pdf

SUD19P06-60 Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.060 at VGS = - 10 V - 19 TrenchFET Power MOSFET - 60 26 0.077 at VGS = - 4.5 V - 16.8 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for F

 9.4. Size:884K  cn vbsemi
 sud19p06-60.pdf

SUD19P06-60 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge