SUD19N20-90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SUD19N20-90
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 136 W
   Voltaje máximo drenador - fuente |Vds|: 200 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 19 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 34 nC
   Tiempo de subida (tr): 50 nS
   Conductancia de drenaje-sustrato (Cd): 180 pF
   Resistencia entre drenaje y fuente RDS(on): 0.09 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET SUD19N20-90

SUD19N20-90 Datasheet (PDF)

..1. Size:161K vishay
sud19n20-90.pdf

SUD19N20-90Vishay SiliconixN-Channel 200 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.090 at VGS = 10 V 19 PWM Optimized2000.105 at VGS = 6 V 17.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchTO-252 DDrain Co

9.1. Size:80K vishay
sud19p06-60l.pdf

New ProductSUD19P06-60LVishay SiliconixP-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.060 at VGS = - 10 V - 19RoHS- 60 26COMPLIANT 0.077 at VGS = - 4.5 V - 16.8TO-252SGDrain Connected to TabG D STop ViewDOrdering Information: SUD19P06-60L-E3 (L

9.2. Size:114K vishay
sud19p06.pdf

New ProductSUD19P06-60Vishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)d Qg (Typ) 100 % UIS Tested0.060 at VGS = - 10 V - 19RoHS- 60 26COMPLIANT 0.077 at VGS = - 4.5 V - 16.8APPLICATIONS High Side Switch for Full Bridge Converter DC/DC Converter for LCD DisplayTO-252SGD

9.3. Size:166K vishay
sud19p06-60.pdf

SUD19P06-60Vishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.060 at VGS = - 10 V - 19 TrenchFET Power MOSFET- 60 260.077 at VGS = - 4.5 V - 16.8 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for F

9.4. Size:884K cn vbsemi
sud19p06-60.pdf

SUD19P06-60www.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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