All MOSFET. SUD19N20-90 Datasheet

 

SUD19N20-90 Datasheet and Replacement


   Type Designator: SUD19N20-90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO-252
 

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SUD19N20-90 Datasheet (PDF)

 ..1. Size:161K  vishay
 sud19n20-90.pdf pdf_icon

SUD19N20-90

SUD19N20-90Vishay SiliconixN-Channel 200 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.090 at VGS = 10 V 19 PWM Optimized2000.105 at VGS = 6 V 17.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchTO-252 DDrain Co

 9.1. Size:80K  vishay
 sud19p06-60l.pdf pdf_icon

SUD19N20-90

New ProductSUD19P06-60LVishay SiliconixP-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.060 at VGS = - 10 V - 19RoHS- 60 26COMPLIANT 0.077 at VGS = - 4.5 V - 16.8TO-252SGDrain Connected to TabG D STop ViewDOrdering Information: SUD19P06-60L-E3 (L

 9.2. Size:114K  vishay
 sud19p06.pdf pdf_icon

SUD19N20-90

New ProductSUD19P06-60Vishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)d Qg (Typ) 100 % UIS Tested0.060 at VGS = - 10 V - 19RoHS- 60 26COMPLIANT 0.077 at VGS = - 4.5 V - 16.8APPLICATIONS High Side Switch for Full Bridge Converter DC/DC Converter for LCD DisplayTO-252SGD

 9.3. Size:166K  vishay
 sud19p06-60.pdf pdf_icon

SUD19N20-90

SUD19P06-60Vishay SiliconixP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.060 at VGS = - 10 V - 19 TrenchFET Power MOSFET- 60 260.077 at VGS = - 4.5 V - 16.8 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for F

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Datasheet: SUB65P04-15 , SUB75P03-07 , SUB85N10-10 , SUD06N10-225L , SUD08P06-155L , SUD09P10-195 , SUD15N15-95 , SUD17N25-165 , TK10A60D , SUD19P06-60 , SUD19P06-60L , SUD20N10-66L , SUD20P15-306 , SUD23N06-31 , SUD23N06-31L , SUD25N04-25 , SUD25N15-52 .

History: TN0200TS | AP60P20Q | JCS10N70F | SFW042N100C3 | STD25NF10 | IRF9151 | IRFL210TRPBF

Keywords - SUD19N20-90 MOSFET datasheet

 SUD19N20-90 cross reference
 SUD19N20-90 equivalent finder
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 SUD19N20-90 substitution
 SUD19N20-90 replacement

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