SUD35N05-26L MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SUD35N05-26L datasheet

..1. Size:140K vishay
sud35n05-26l.pdf pdf_icon

SUD35N05-26L Vishay Siliconix N-Channel 55 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A)a 175 C Rated Maximum Junction Temperature 0.0200 at VGS = 10 V Low Input Capacitance 35 55 0.0260 at VGS = 4.5 V Material categorization For definitions of 30 compliance please see www.vishay.com/doc?99912 TO-252 D

6.1. Size:72K vishay
sud35n05.pdf pdf_icon

New Product SUD35N05-26L Vishay Siliconix N-Channel 55 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) rDS(on) ( ) ID (A)a Available 175 C Rated Maximum Junction Temperature 0.020 at VGS = 10 V 35 RoHS* 55 Low Input Capacitance 0.026 at VGS = 4.5 V 30 COMPLIANT TO-252 D Drain Connected to Tab G G D S Top View S Orderi

8.1. Size:168K vishay
sud35n10-26p.pdf pdf_icon

New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) 100 % UIS Tested RoHS 0.026 at VGS = 10 V 100 35 31 nC COMPLIANT APPLICATIONS Primary Side Switch TO-252 D Drain Connected to Tab G G D S Top View S Ordering Information SUD35N10-26P-E3 (Lead (Pb

8.2. Size:168K vishay
sud35n10.pdf pdf_icon