SUD35N05-26L MOSFET Datasheet: N-Ch, 55V, 35A. Full specification with pinout and replacement list

SUD35N05-26L Specs and Replacement

Type Designator: SUD35N05-26L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO-252

SUD35N05-26L substitution

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SUD35N05-26L datasheet

..1. Size:140K vishay
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SUD35N05-26L Vishay Siliconix N-Channel 55 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A)a 175 C Rated Maximum Junction Temperature 0.0200 at VGS = 10 V Low Input Capacitance 35 55 0.0260 at VGS = 4.5 V Material categorization For definitions of 30 compliance please see www.vishay.com/doc?99912 TO-252 D... See More ⇒

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New Product SUD35N05-26L Vishay Siliconix N-Channel 55 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) rDS(on) ( ) ID (A)a Available 175 C Rated Maximum Junction Temperature 0.020 at VGS = 10 V 35 RoHS* 55 Low Input Capacitance 0.026 at VGS = 4.5 V 30 COMPLIANT TO-252 D Drain Connected to Tab G G D S Top View S Orderi... See More ⇒

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New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) 100 % UIS Tested RoHS 0.026 at VGS = 10 V 100 35 31 nC COMPLIANT APPLICATIONS Primary Side Switch TO-252 D Drain Connected to Tab G G D S Top View S Ordering Information SUD35N10-26P-E3 (Lead (Pb... See More ⇒

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