SUD35N10-26P Todos los transistores

 

SUD35N10-26P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SUD35N10-26P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: TO-252

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SUD35N10-26P datasheet

 ..1. Size:168K  vishay
 sud35n10-26p.pdf pdf_icon

SUD35N10-26P

New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) 100 % UIS Tested RoHS 0.026 at VGS = 10 V 100 35 31 nC COMPLIANT APPLICATIONS Primary Side Switch TO-252 D Drain Connected to Tab G G D S Top View S Ordering Information SUD35N10-26P-E3 (Lead (Pb

 6.1. Size:168K  vishay
 sud35n10.pdf pdf_icon

SUD35N10-26P

New Product SUD35N10-26P Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) 100 % UIS Tested RoHS 0.026 at VGS = 10 V 100 35 31 nC COMPLIANT APPLICATIONS Primary Side Switch TO-252 D Drain Connected to Tab G G D S Top View S Ordering Information SUD35N10-26P-E3 (Lead (Pb

 8.1. Size:72K  vishay
 sud35n05.pdf pdf_icon

SUD35N10-26P

New Product SUD35N05-26L Vishay Siliconix N-Channel 55 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) rDS(on) ( ) ID (A)a Available 175 C Rated Maximum Junction Temperature 0.020 at VGS = 10 V 35 RoHS* 55 Low Input Capacitance 0.026 at VGS = 4.5 V 30 COMPLIANT TO-252 D Drain Connected to Tab G G D S Top View S Orderi

 8.2. Size:140K  vishay
 sud35n05-26l.pdf pdf_icon

SUD35N10-26P

SUD35N05-26L Vishay Siliconix N-Channel 55 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A)a 175 C Rated Maximum Junction Temperature 0.0200 at VGS = 10 V Low Input Capacitance 35 55 0.0260 at VGS = 4.5 V Material categorization For definitions of 30 compliance please see www.vishay.com/doc?99912 TO-252 D

MOSTRAR MÁS

Otros transistores... SUD19P06-60L , SUD20N10-66L , SUD20P15-306 , SUD23N06-31 , SUD23N06-31L , SUD25N04-25 , SUD25N15-52 , SUD35N05-26L , SI2302 , SUD40N02-08 , SUD40N02-3M3P , SUD40N04-10A , SUD40N08-16 , SUD40N10-25 , SUD42N03-3M9P , SUD45P03-09 , SUD45P03-10 .

History: IRF7309PBF-1 | 4N65KG-TND-R | HCA60R290 | BRI740 | BSC079N03LSCG | AOY2N60 | BSC220N20NSFD

 

 

 

 

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