SUD35N10-26P Datasheet and Replacement. Cross Reference Search

SUD35N10-26P Datasheet (PDF)

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New ProductSUD35N10-26PVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ) 100 % UIS TestedRoHS 0.026 at VGS = 10 V 100 35 31 nCCOMPLIANT APPLICATIONS Primary Side SwitchTO-252DDrain Connected to TabGG D STop ViewSOrdering Information: SUD35N10-26P-E3 (Lead (Pb

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New ProductSUD35N05-26LVishay SiliconixN-Channel 55 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) rDS(on) ()ID (A)aAvailable 175 C Rated Maximum Junction Temperature0.020 at VGS = 10 V 35RoHS*55 Low Input Capacitance0.026 at VGS = 4.5 V 30 COMPLIANTTO-252DDrain Connected to TabGG D STop ViewSOrderi

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SUD35N05-26LVishay SiliconixN-Channel 55 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) ()ID (A)a 175 C Rated Maximum Junction Temperature0.0200 at VGS = 10 V Low Input Capacitance35550.0260 at VGS = 4.5 V Material categorization: For definitions of30compliance please see www.vishay.com/doc?99912TO-252D

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