SUD50N03-06P Todos los transistores

 ..1. Size:63K  vishay
 sud50n03-06p.pdf

SUD50N03-06P Vishay Siliconix N-Channel 30-V (D-S) 175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175 _C Junction Temperature VDS (V) rDS(on) (W) ID (A)b D Optimized for Low-Side Synchronous Rectifier * Operation 0.0065 at VGS = 10 V 84b 30 30 D 100 % Rg Tested 0.0095 at VGS = 4.5 V 59b APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-252 D Dr

 3.1. Size:90K  vishay
 sud50n03-06ap.pdf

SUD50N03-06AP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, e Qg (Typ) D Optimized for Low Side Synchronous Rectifier Operation 0.0057 @ VGS = 10 V 90 RoHS 30 30 30 30 COMPLIANT D 100% Rg Tested 0.0078 @ VGS = 4.5 V 77 APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-252 D

 4.1. Size:95K  vishay
 sud50n03-07.pdf

SUD50N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 175_C Maximum Junction Temperature D 100% Rg Tested 0.007 @ VGS = 10 V 20 30 30 0.010 @ VGS = 4.5 V 16 D TO-252 G Drain Connected to Tab G D S Top View Ordering Information S SUD50N03-07 SUD50N03-07 E3 ( Lead Free) N-Channel MOS

 4.2. Size:149K  vishay
 sud50n03-09p.pdf

SUD50N03-09P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)b Available Optimized for High- or Low-Side 0.0095 at VGS = 10 V 63b RoHS* 100 % Rg Tested 30 COMPLIANT 0.014 at VGS = 4.5 V 52b APPLICATIONS DC/DC Converters Synchronous Rectifiers TO-252 D Drain Connected to T